direct band gap meaning in Chinese
直接带隙
Examples
- With a broaden and likely direct band gap , porous silicon has a different band structure to that of the bulk silicon . thus the porous silicon can emit at room temperature
多孔硅改变了体硅的能带结构，使禁带展宽，并由间接带隙向直接带隙转变，实现了室温发光。 - With a broad and likely direct band gap , porous silicon has a different band structure from that of the bulk silicon . thus the porous silicon can emit visible light at room temperature
多孔硅改变了本体硅的能带结构，使禁带宽度展宽，并由间接禁带向直接禁带转变，实现了室温发光。 - It is widely accepted that zno is one of the most promising materials for producing an ultraviolet laser at room temperature due to its wide direct band gap ( eg = 3 . 3ev ) and large excitonic binding energy of 60 mev , which was testified by the results of optically pumped stimulated emission and lasing from zno thin films
氧化锌作为一种宽带隙半导体（ 3 . 3ev ） ，激子束缚能大（ 60mev ） ，在室温下容易获得强的激子发射，而且可能成为紫外激光的重要材料。因此，对氧化锌的研究已成为继gan之后宽带隙半导体研究的又一热点。 - C60 , a new type of semiconductor material , has many superior properties , such as wide forbidden band , direct band gap , rapid responding time , high optical damage threshold value and wide responding frequency band etc . these capabilities indicate that c60 film will be used widely in computer , integrate optical instrument and storage device etc . however , the preparation and the purification of c60 material affect the large - scale application at all times
C _ ( 60 )薄膜作为新的半导体材料具备许多优越特性，如禁带宽度大、直接带隙、快速响应时间、高的光学损伤阀值、较宽的响应频带等，这些性能预示了c _ ( 60 )薄膜在计算机、集成光学器件、光存储器等方面具有广阔的应用前景，但c _ ( 60 )材料的制备与提纯还一直是阻碍该新材料投入大规模实际应用的主要因素。 - The results show that the differences between the two composites are very large . although the micrograph of the ni nano - wire and the co nano - wire are nearly the same , as the metal composition increased , the absorption band - edge of the ni / aao composite is small red - shifted ( 13 run ) , however , the absorption band - edge of the co / aao composite is strongly red - shifted ( 80 nm ) . meanwhile , the ni / aao and co / aao composite exhibit the optical features of the semiconductor with indirect and direct band gap respectively
或no组份比的增加， ni / aao吸收边的红移量仅约13nln ，而co / aao的吸收边红移量却超过了80lun ，分析发现ni / aao复合体系具有间接带隙半导体的光学特征，而co从ao复合结构则具有直接带隙半导体的光学特征; 5 .实验研究了a创aao纳米有序阵列复合结构的光吸收特性，在其光吸收谱上出现了较强的ag表面等离子体振荡吸收峰，随ag沉积量的减少，吸收峰位发生红移，且逐渐展宽